G-LINK
GLT6400L16
Ultra Low Power 256k x 16 CMOS SRAM
May 2003(Rev. 1.4)
DC Operating Characteristics ( Vcc = 2.7V to 3.6V,TA = -0°C to 70°C )
Parameter
Sym.
Test Conditions
70
Min
Max
Input Leakage Current
ILI VCC = Max,
Vin = Gnd to VCC
1
Output Leakage
Current
ILO CE1 =VIH or CE2 = VIH
1
VCC = Max, VOUT = Gnd to VCC
Operating Power
Supply Current
ICC
CE1 =VIL ,CE2 = VIH
5
VIN=VIH or VIL, IOUT=0mA
Average Operating
ICC1
CE1 =VIL ,CE2 = VIH
50
Current
IOUT = 0mA,
Min Cycle, 100% Duty
ICC2 CE1 =0.2V
5
CE2 = VCC – 0.2V
IOUT = 0mA,
Cycle Time=1µs, 100% Duty
Standby Power Supply
Current(TTL Level)
ISB
CE1 =VIH or CE2 = VIL
0.3
Standby Power Supply
Current (CMOS Level)
ISB1
CE1 ≥ VCC-
GLT6400L16LL
20
0.2V or
CE2 ≤ 0.2V, f=0
VIN ≤ 0.2V or GLT6400L16SL
5
VIN ≥ VCC-0.2V
Output Low Voltage
VOL IOL = 2.1 mA
0.4
Output High Voltage
VOH IOH = -1 mA
2.4
85
Unit
Min
Max
1
µA
1
µA
5
mA
45
mA
5
mA
0.3
mA
20
µA
5
µA
0.4
V
2.4
V
Data Retention
Parameter
VCC for Data retention
Data Retention Current
Chip Deselect to Data Retention Time
Operating Recovery Time(2)
Sym.
VDR
ICCDR
tCDR
tR
Test Conditions
CE1 ≥ VCC -0.2V
CE2 ≤ +0.2V
VIN ≥ VCC -0.2V or
VIN ≤ 0.2V
Min.
1.0
-
0
tRC
Max.
-
4
-
-
Unit
V
µA
ns
ns
G-Link Technology Corporation,Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-26599658
-4-