2SD748 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
2SD748 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD748
2SD748A
IC=10mA ;RBE=∞
V(BR)EBO Emitter-base breakdown voltage
IE=5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBE
Base-emitter on voltage
IC=1A ; VCE=5V
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
Product Specification
2SD748 2SD748A
MIN TYP. MAX UNIT
200
V
250
5
V
1.0
V
1.5
V
1.0
mA
1.0
mA
25
200
2
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