2SC4764 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

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2SC4764

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon NPN Power Transistors

www.jmnic.com

2SC4764

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

VEBO

Emitter-base breakdown voltage

VCEsat Collector-emitter saturation voltage

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

Cob

Collector output capacitance

VF

Forward voltage(damper diode)

fT

Transition frequency

Switching times (inductive load)

ts

Storage time

tf

Fall time

CONDITIONS

IE=300mA ;IC=0

IC=4A; IB=0.8A

IC=4A; IB=0.8A

VCB=1500V; IE=0

VEB=5V; IC=0

IC=1A ; VCE=5V

IC=4A ; VCE=5V

IE=0 ; VCB=10V,f=1MHz

IF=4A

IE=0.1A ; VCE=10V

ICP=4A;IB1(end) =0.8A

fH=31.5kHz

MIN TYP. MAX UNIT

5

V

5

V

1.5

V

1

mA

83

250

mA

8

12

5

9

170

pF

1.2

1.8

V

1

3

MHz

3.2

5.0

μs

0.2

0.5

μs

JMnic

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