2SA1170 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

View to exact match

2SA1170

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-1A

ICBO

Collector cut-off current

VCB=-200V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-8A ; VCE=-4V

fT

Transition frequency

IC=-1A ; VCE=-12V

Switching times

tr

Rise time

tstg

Storage time

tf

Fall time

IC=-10A; IB1=- IB2=-1A

RL=4Ω;VCC=-40V

Product Specification

2SA1170

MIN TYP. MAX UNIT

-200

V

-6

V

-2.5

V

-100 μA

-100 μA

20

20

MHz

0.6

μs

0.9

μs

0.2

μs

2

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