BSS138PW View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

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BSS138PW

60 V, 320 mA N-channel Trench MOSFET

NXP Semiconductors. 

Nexperia

BSS138PW

60 V, 320 mA N-channel Trench MOSFET

5.0

VGS

(V)

4.0

017aaa119

3.0

2.0

1.0

0.0

0.0

0.2

0.4

0.6

0.8

QG (nC)

ID = 300 mA; VDS = 30 V; Tamb = 25 °C

Fig 14. Gate-source voltage as a function of gate

charge; typical values

1.2

IS

(A)

0.8

0.4

VDS

ID

VGS(pl)

VGS(th)

VGS

QGS1 QGS2

QGS

QGD

QG(tot)

003aaa508

Fig 15. Gate charge waveform definitions

017aaa120

(1)

(2)

0.0

0.0

0.4

0.8

1.2

VSD (V)

VGS = 0 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

Fig 16. Source current as a function of source-drain voltage; typical values

BSS138PW

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 2 November 2010

© Nexperia B.V. 2017. All rights reserved

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