BLF245 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
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BLF245 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF power MOS transistor
Product specification
BLF245
6
handbToo.Ck,.halfpage
(mV/K)
4
2
0
−2
−4
−6
10
102
MGP168
103
104
ID (mA)
VDS = 10 V; valid for Tj = 25 to 125 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
12
handbook, halfpage
ID
(A)
8
Tj = 25 °C
125 °C
MGP169
4
0
0
10
VGS (V)
20
VDS = 10 V.
Fig.5 Drain current as a function of gate-source
voltage; typical values.
handbook0, .h8alfpage
RDSon
(Ω)
0.6
MGP170
0.4
0.2
0
0
40
80
120
160
Tj (°C)
VGS = 10 V; ID = 1.5 A.
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
240
handbook, halfpage
C
(pF)
200
160
120
80
40
0
10
MGP171
Cis
Cos
20
30
40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
2003 Sep 02
5
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