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Part Name
Description
TPC8107(2003) View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
TPC8107
(Rev.:2003)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TPC8107 Datasheet PDF : 7 Pages
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7
TPC8107
r
th
-
t
w
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t
=
10 s
(1)
100
10
1
0.1
0.001
0.01
0.1
1
10
Pulse width t
w
(S)
Safe operating area
-
100
ID max (pulse)
*
-
10
10 ms
*
1 ms
*
-
1
-
0.1
*
Single pulse
Ta
=
25°C
Curves must be derated
linearly with increase in
temperature.
-
0.01
-
0.01
-
0.1
-
1
VDSS max
-
10
Drain-source voltage V
DS
(V)
-
100
Single pulse
100
1000
6
2003-02-20
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