BF998,235 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
View to exact match
BF998,235 Datasheet PDF : 15 Pages
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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
FEATURES
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143B or SOT143R package with
source and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
handbook, halfpage
4
3
d
g2
g1
1
2
s,b
Top view
MAM039
Marking code: MOp.
Fig.1 Simplified outline (SOT143B)
and symbol; BF998.
handbook, halfpag3e
4
d
g2
g1
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g2
gate 2
g1
gate 1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-s
Crs
F
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Tj
operating junction temperature
2
1
Top view
s,b
MAM040
Marking code: MOp.
Fig.2 Simplified outline (SOT143R)
and symbol; BF998R.
CONDITIONS
f = 1 MHz
f = 800 MHz
TYP.
24
2.1
25
1
MAX.
12
30
200
150
UNIT
V
mA
mW
mS
pF
fF
dB
C
1996 Aug 01
2
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