SI4435DYPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
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SI4435DYPBF Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = -8.8A
8
VDS = -5V
-10V
-15V
6
4
2
0
0
6
12
18
24
30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
100µ s
1ms
10ms
1
VGS = -10V
0.1 SINGLE PULSE
RθJA = 125oC/W
T A = 25oC
100ms
1s
10s
DC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2500
2000
1500
CISS
f = 1 MHz
VGS = 0 V
1000
500
COSS
CRSS
0
0
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 125oC/W
P(pk)
t1
TJ - TA = Pt2 * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
SI4435DY Rev D1(W)
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