The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM80814-005 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures.
■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ 5:1 VSWR CAPABILITY
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 5.0 W MIN. WITH 8.5 dB GAIN